Fábio Menezes De Souza Lima

Dados pessoais

Publicações

Total: 119

Área temática ASJC

Percentual das publicações classificadas

  • HS Ciências da Saúde
  • LS Ciências da Vida
  • MU Multidisciplinar
  • PS Ciências Físicas
  • SH Ciências Sociais e Humanidades

Categoria ASJC

Categorias ASJC mais frequentes

Termos frequentes nas publicações

Nuvem de termos dos títulos das publicações
Nome Vínculo Links Grande área de atuação Área de atuação
Antonio Maia De Jesus Chaves NETO Engenharias Engenharia Química
Fabio Ferreira MONTEIRO Ciências Exatas e da Terra Física
Olavo Leopoldino Da Silva FILHO Ciências Exatas e da Terra Física
Figura 1

Número de publicações por ano e por tipo

Todas as publicações do perfil

Figura 2

Categorias ASJC mais frequentes por ano

A cor dos pontos identifica a categoria predominante

Figura 3

Mapa de calor das categorias ASJC por ano

Frequências absolutas; cores mais escuras indicam mais publicações. Todas as categorias ASJC e anos disponíveis, sem aplicar os filtros da página.

Escala: 0 → 13

Mapa de calor das categorias ASJC por ano
Categoria ASJC199920002001200220032004200520062007200820092010201120122013201420152016201720182019202020222023202420252026
3107 · Atomic and Molecular Physics; and Optics1168134332370100010010300012
3101 · Physics and Astronomy (miscellaneous)000100011120021110010001010
2603 · Analysis000000000000020102222000100
2601 · Mathematics (miscellaneous)000000000000000001100021101
3104 · Condensed Matter Physics010012001000100000000000000
3103 · Astronomy and Astrophysics000000000000000001000100300
3109 · Statistical and Nonlinear Physics000000000001000120010000000
1606 · Physical and Theoretical Chemistry110000010000000000000100000
2208 · Electrical and Electronic Engineering000200100000000000000000000
2504 · Electronic; Optical and Magnetic Materials000000010000000000000000000
2506 · Metals and Alloys000001000000000000000000000
2602 · Algebra and Number Theory000000000000000000010000000
119 publicação(ões)
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Ano Tipo Registro Área temática e categoria ASJC
2005 Artigo em periódico
Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices M G BEZERRA; J A K FREIRE; Valder Nogueira FREIRE; Gil De Aquino FARIAS; Fábio Menezes De Souza LIMA et al Microelectronics Journal DOI 10.1016/j.mejo.2005.02.057 ISSN 0026-2692
PS Electrical and Electronic Engineering
2004 Trabalho em evento
Realistic; non-abrupt doping profiles in one-side modulatio-doped GaAs/AlGaAs quantum wells Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al XXVII ENFMC
PS Atomic and Molecular Physics; and Optics
2004 Trabalho em evento
Excitonic transition energies in strained InGaAs/InP and InGaAs/GaAs single quantum wells Luciano Calheiros LAPAS; Fábio Menezes De Souza LIMA XXVII ENFMC
PS Atomic and Molecular Physics; and Optics
2004 Trabalho em evento
Competition between alloy disorder and interface roughness in the limitation of electron mobility in InGaAs/InP single quantum wells Fábio Menezes De Souza LIMA; Aline Bessa VELOSO; Antônio Luciano De Almeida FONSECA XXVII ENFMC
PS Metals and Alloys
2004 Trabalho em evento
Effect of non-abrupt heterointerfaces and doping profiles on the electronic subband structure of modulation-doped GaAs/AlGaAs quantum wells Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al International Conference on Semiconductor Nanostructures and Nano-devices - ICSNN
PS Atomic and Molecular Physics; and Optics
2004 Trabalho em evento
Interface properties in modulation-doped GaAs/AlAs based quantum wells and superlattices M G BEZERRA; J A K FREIRE; Valder Nogueira FREIRE; Gil De Aquino FARIAS; Fábio Menezes De Souza LIMA et al V-th International Conference on Low-Dimensional Structures and Devices (LDSD)
PS Atomic and Molecular Physics; and Optics
2004 Artigo em periódico
Electronic properties of a quasi-two-dimensional electron gas in semiconductor quantum wells under intense laser fields Enders B; Lima F; Nunes O; Fonseca A; Agrello D et al Physical Review. B; Condensed Matter and Materials Physics DOI 10.1103/PhysRevB.70.035307 ISSN 1098-0121
PS Condensed Matter Physics
2004 Artigo em periódico
Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al Physica Status Solidi. C; Conferences and Critical Reviews DOI 10.1002/pssc.200405143 ISSN 1610-1634
PS Condensed Matter Physics
2003 Trabalho em evento
Electron-DOS tuning in nanostructures by an intense; long-wavelength laser field Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Eronides Ferreira Da Silva JUNIOR; Valder Nogueira FREIRE et al 23th ICPS
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Study of exciton transition energies in InGaAs/GaAs strained quantum wells Luciano Calheiros LAPAS; Fábio Menezes De Souza LIMA; Frank Vasconcelos SALES; Maria Aparecida G SOLER XXVI ENFMC
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
EFFECTS OF NON-ABRUPT INTERFACES ON THE ELECTRON MOBILITY IN SINGLE ASYMMETRIC QUANTUM WELLS Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al XXVI ENFMC
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Effect of intense; long-wavelength laser fields on the energy levels and density of states for electrons in a semiconductor quantum well Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Qu FANYAO et al XXVI ENFMC
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
EFFECT OF INTENSE; LONG-WAVELENGTH; NON-RESONANT LASER EFFECT OF INTENSE; LONG-WAVELENGTH; NON-RESONANT LASER FIELDS ON THE LOW-TEMPERATURE ELECTRON MOBILITY IN SINGLE InGaAs/InP LATTICE-MATCHED QUANTUM WELLS Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Valder Nogueira FREIRE; Eronides Ferreira Da Silva JUNIOR First International Meeting on Applied Physics - aphys 2003
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Effect of Non-abrupt Interfaces on the Low-temperature Electron Mobility in Modulation-doped GaAs/AlGaAs Single Quantum Wells Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al First International Meeting on Applied Physics - aphys 2003
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Effect of non-abrupt interfaces on the 2DEG areal density and low-temperature mobility in single quantum wells Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al NanoSemiMat2
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
The 2D-3D transition in n-type modulation-doped GaAs/AlGaAs parabolic quantum wells Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Qu FANYAO; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA et al NanoSemiMat2
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Dependence of exciton binding energy on In composition in InGaAs/GaAs strained quantum wells Fábio Menezes De Souza LIMA; Luciano Calheiros LAPAS; Antônio Luciano De Almeida FONSECA NanoSemiMat2
PS Atomic and Molecular Physics; and Optics
2003 Trabalho em evento
Effect of residual acceptors on electron mobility in single asymmetric quantum wells Lima F; Fonseca A; Nunes O; Qu F; Freire V et al ICSNN-2002 DOI 10.1016/S1386-9477(02)00824-X ISBN 13869477
PS Atomic and Molecular Physics; and Optics
2003 Artigo em periódico
Vanishing of the impurity binding energy in n-doped In0.53Ga0.47As/InP quantum wells Fábio Menezes De Souza LIMA; Luciano Calheiros LAPAS; Paulo César MORAIS Physica. E; Low-Dimensional Systems and Nanostructures (Print) DOI 10.1016/S1386-9477(02)00666-5 ISSN 1386-9477
PS Atomic and Molecular Physics; and Optics
2003 Artigo em periódico
Effect of residual acceptors on electron mobility in single asymmetric quantum wells Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO; Valder Nogueira FREIRE et al Physica E ISSN 1386-9477
PS Atomic and Molecular Physics; and Optics
2003 Artigo em periódico
Intrasubband spin-flip relaxation by one-magnon processes in Cd1-xMnxTe quantum wells Eduardo SOUTO; Antônio Cleves De Oliveira NUNES; Fábio Menezes De Souza LIMA; Deise Amaro AGRELLO; Antônio Luciano De Almeida FONSECA Physical Review. B; Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B; Condensed Matter and Materials Physics) DOI 10.1103/PhysRevB.68.125317 ISSN 0163-1829
PS Condensed Matter Physics
2003 Artigo em periódico
Effect of residual acceptors on electron mobility in single asymmetric quantum wells Fábio Menezes De Souza LIMA; FONSECA; Nunes O A C; Qu FANYAO; Valder Nogueira FREIRE et al Physica E. Low-Dimensional Systems and Nanostructures DOI 10.1016/S1386-9477(02)00824-X ISSN 1386-9477
PS Atomic and Molecular Physics; and Optics
2002 Trabalho em evento
Investigation of the effects of an intense laser field radiation on the electronic energy levels in GaAs/AlGaAs single quantum wells Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO XXV ENFMC
PS Atomic and Molecular Physics; and Optics
2002 Trabalho em evento
Electron mobility in GaN/AlGaN single quantum wells Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO XXV ENFMC
PS Electrical and Electronic Engineering
2002 Trabalho em evento
Hydrogenic impurity binding energy in a GaN/AlGaN quantum well: the possibility of a semiconductor-metal transition Fábio Menezes De Souza LIMA; Paulo César MORAIS XXV ENFMC
PS Electrical and Electronic Engineering
2005 Artigo em periódico
PS Electrical and Electronic Engineering

Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices

Microelectronics Journal

M G BEZERRA; J A K FREIRE; Valder Nogueira FREIRE; Gil De Aquino FARIAS; Fábio Menezes De Souza LIMA et al

DOI ISSN 0026-2692
2004 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Realistic; non-abrupt doping profiles in one-side modulatio-doped GaAs/AlGaAs quantum wells

XXVII ENFMC

Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

2004 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Excitonic transition energies in strained InGaAs/InP and InGaAs/GaAs single quantum wells

XXVII ENFMC

Luciano Calheiros LAPAS; Fábio Menezes De Souza LIMA

2004 Trabalho em evento
PS Metals and Alloys

Competition between alloy disorder and interface roughness in the limitation of electron mobility in InGaAs/InP single quantum wells

XXVII ENFMC

Fábio Menezes De Souza LIMA; Aline Bessa VELOSO; Antônio Luciano De Almeida FONSECA

2004 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Effect of non-abrupt heterointerfaces and doping profiles on the electronic subband structure of modulation-doped GaAs/AlGaAs quantum wells

International Conference on Semiconductor Nanostructures and Nano-devices - ICSNN

Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

2004 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Interface properties in modulation-doped GaAs/AlAs based quantum wells and superlattices

V-th International Conference on Low-Dimensional Structures and Devices (LDSD)

M G BEZERRA; J A K FREIRE; Valder Nogueira FREIRE; Gil De Aquino FARIAS; Fábio Menezes De Souza LIMA et al

2004 Artigo em periódico
PS Condensed Matter Physics

Electronic properties of a quasi-two-dimensional electron gas in semiconductor quantum wells under intense laser fields

Physical Review. B; Condensed Matter and Materials Physics

Enders B; Lima F; Nunes O; Fonseca A; Agrello D et al

DOI ISSN 1098-0121
2004 Artigo em periódico
PS Condensed Matter Physics

Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells

Physica Status Solidi. C; Conferences and Critical Reviews

Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

DOI ISSN 1610-1634
2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Electron-DOS tuning in nanostructures by an intense; long-wavelength laser field

23th ICPS

Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Eronides Ferreira Da Silva JUNIOR; Valder Nogueira FREIRE et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Study of exciton transition energies in InGaAs/GaAs strained quantum wells

XXVI ENFMC

Luciano Calheiros LAPAS; Fábio Menezes De Souza LIMA; Frank Vasconcelos SALES; Maria Aparecida G SOLER

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

EFFECTS OF NON-ABRUPT INTERFACES ON THE ELECTRON MOBILITY IN SINGLE ASYMMETRIC QUANTUM WELLS

XXVI ENFMC

Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Effect of intense; long-wavelength laser fields on the energy levels and density of states for electrons in a semiconductor quantum well

XXVI ENFMC

Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Qu FANYAO et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

EFFECT OF INTENSE; LONG-WAVELENGTH; NON-RESONANT LASER EFFECT OF INTENSE; LONG-WAVELENGTH; NON-RESONANT LASER FIELDS ON THE LOW-TEMPERATURE ELECTRON MOBILITY IN SINGLE InGaAs/InP LATTICE-MATCHED QUANTUM WELLS

First International Meeting on Applied Physics - aphys 2003

Fábio Menezes De Souza LIMA; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA; Valder Nogueira FREIRE; Eronides Ferreira Da Silva JUNIOR

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Effect of Non-abrupt Interfaces on the Low-temperature Electron Mobility in Modulation-doped GaAs/AlGaAs Single Quantum Wells

First International Meeting on Applied Physics - aphys 2003

Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Effect of non-abrupt interfaces on the 2DEG areal density and low-temperature mobility in single quantum wells

NanoSemiMat2

Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Valder Nogueira FREIRE et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

The 2D-3D transition in n-type modulation-doped GaAs/AlGaAs parabolic quantum wells

NanoSemiMat2

Fábio Menezes De Souza LIMA; Bernhard George ENDERS; Qu FANYAO; Antônio Cleves De Oliveira NUNES; Antônio Luciano De Almeida FONSECA et al

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Dependence of exciton binding energy on In composition in InGaAs/GaAs strained quantum wells

NanoSemiMat2

Fábio Menezes De Souza LIMA; Luciano Calheiros LAPAS; Antônio Luciano De Almeida FONSECA

2003 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Effect of residual acceptors on electron mobility in single asymmetric quantum wells

ICSNN-2002

Lima F; Fonseca A; Nunes O; Qu F; Freire V et al

DOI ISBN 13869477
2003 Artigo em periódico
PS Atomic and Molecular Physics; and Optics

Vanishing of the impurity binding energy in n-doped In0.53Ga0.47As/InP quantum wells

Physica. E; Low-Dimensional Systems and Nanostructures (Print)

Fábio Menezes De Souza LIMA; Luciano Calheiros LAPAS; Paulo César MORAIS

DOI ISSN 1386-9477
2003 Artigo em periódico
PS Atomic and Molecular Physics; and Optics

Effect of residual acceptors on electron mobility in single asymmetric quantum wells

Physica E

Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO; Valder Nogueira FREIRE et al

ISSN 1386-9477
2003 Artigo em periódico
PS Condensed Matter Physics

Intrasubband spin-flip relaxation by one-magnon processes in Cd1-xMnxTe quantum wells

Physical Review. B; Condensed Matter. (Cessou 1997. Cont. 1098-0121 Physical Review. B; Condensed Matter and Materials Physics)

Eduardo SOUTO; Antônio Cleves De Oliveira NUNES; Fábio Menezes De Souza LIMA; Deise Amaro AGRELLO; Antônio Luciano De Almeida FONSECA

DOI ISSN 0163-1829
2003 Artigo em periódico
PS Atomic and Molecular Physics; and Optics

Effect of residual acceptors on electron mobility in single asymmetric quantum wells

Physica E. Low-Dimensional Systems and Nanostructures

Fábio Menezes De Souza LIMA; FONSECA; Nunes O A C; Qu FANYAO; Valder Nogueira FREIRE et al

DOI ISSN 1386-9477
2002 Trabalho em evento
PS Atomic and Molecular Physics; and Optics

Investigation of the effects of an intense laser field radiation on the electronic energy levels in GaAs/AlGaAs single quantum wells

XXV ENFMC

Bernhard George ENDERS; Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO

2002 Trabalho em evento
PS Electrical and Electronic Engineering

Electron mobility in GaN/AlGaN single quantum wells

XXV ENFMC

Fábio Menezes De Souza LIMA; Antônio Luciano De Almeida FONSECA; Antônio Cleves De Oliveira NUNES; Qu FANYAO

2002 Trabalho em evento
PS Electrical and Electronic Engineering

Hydrogenic impurity binding energy in a GaN/AlGaN quantum well: the possibility of a semiconductor-metal transition

XXV ENFMC

Fábio Menezes De Souza LIMA; Paulo César MORAIS